Cohort Three

Ian Holman

Project Description:

Power electronics is a critical technology for many low-carbon energy systems such as renewable power generation and electric vehicles. Wide bandgap (WBG) semiconductor devices are thought to be the main enabler for the next generation power electronics. However, adverse effect of parasitic components associated with device packaging, circuit and system layouts and the uncontrollability of device inherent characteristics are limiting the use of wide-band gap (WBG) devices in high performance power electronics converters. Conventional circuit construction using printed circuit board (PCB) and thermal management using conventional liquid or air-cooled heatsink do not comply with WGB devices’ (SiC and GaN) application in highly-integrated, high-frequency (100s of kHz) power converters. This research will investigate the challenges of WBG semiconductor devices’ electrical and thermal modelling, condition monitoring and electro-thermal optimisation issues. The research will also focus on: high frequency converter design and build techniques, more compact fabrication techniques, integrated WBG device packaging, manufacturing process optimisation to reduce thermo-mechanical deformation and enhanced thermal management. The work will begin with an extensive analysis, simulation, optimisation and modelling phase. Once successful solutions are identified, laboratory-based testing will begin to allow practical validation of the ideas followed by implementation of the prototype test hardware in our dedicated laboratories at the Power Electronics and Machine Centre of the University of Nottingham.

Project Supervisors:

Dr Rishad Ahmed

Dr Paul Evans

Dr Neo Lophitis

Interests:

Electro-Mechanical Engineering and Designing for Long Term Sustainability