Atreyee Roy

• PhD Student sponsored by Dynex Semiconductors Ltd Newcastle University
• Email: a.roy9@newcastle.ac.uk
• Qualifications: BSc (Hons - Electronic Science) from the University of Calcutta. MSc (Electronic Science) from the University of Calcutta. MSc (Microelectronics) from Newcastle University.

Project Supervisors:

Professor Anthony O'Neill

Project Title and Description:

SiC Trench MOSFETs for Power Electronic Systems

A wide band-gap semiconductor – Silicon Carbide (SiC) with exceptional electrical and other material properties has been observed to be significantly advantageous over Silicon (Si) for devices such as Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) for applications in power electronics. But the poor metal oxide semiconductor (MOS) current carrying capability and reliability issues add challenging factors for its usage in commercial high-performance devices.

My Ph.D. plan is to address new routes through design, fabrication, and characterization toward the realization of high-performance vertical channel trench power MOSFETs, whose vertical crystal plane will have a different crystallographic plane to the lateral one previously studied at Newcastle. This earlier approach to re-engineering the MOS gate stack demonstrated significant improvements in 4H-SiC lateral MOSFETs, including drain current increases greater than 10x compared to previous approaches and subthreshold slopes reductions. My work will concentrate on the fabrication of 4H-SiC trench MOSFETs, with varying drift layer thickness for engineering the blocking voltage. Reliability studies will be performed on larger populations of devices following JEDEC standards for instability in ambient temperature.

Interests:

Device fabrication and semiconductor physics, with a special interest in MOSFETs

Power Electronics

Bioelectronics and Sensors

Hobbies:

include Painting and fine arts, Indian classical music and dance